Vaizdas | PAGRINDINĖ dalis # Gamintojas | Aprašymas / PDF | Kiekis / RFQ |
---|---|---|---|
Advanced Linear Devices Inc. |
MOSFET 4P-CH 10.6V 14DIP. |
20736vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP. |
17545vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP. |
25815vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC. |
18722vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC. |
20078vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP. |
20991vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP. |
16409vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP. |
18806vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC. |
23350vnt. sandėlyje |
|
Diodes Incorporated |
MOSFET 2N-CH X1-WLB1818-4. |
333981vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP. |
22711vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP. |
20473vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC. |
23481vnt. sandėlyje |
|
ON Semiconductor |
MOSFET 2N-CH 30V 0.25A SC-88. |
773094vnt. sandėlyje |
|
Diodes Incorporated |
MOSFETN-CHAN 12V X4-DSN3118-6. |
214936vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP. |
18722vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8DIP. |
16588vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP. |
16588vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP. |
16895vnt. sandėlyje |
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP. |
19066vnt. sandėlyje |