| Vaizdas | PAGRINDINĖ dalis # Gamintojas | Aprašymas / PDF | Kiekis / RFQ |
|---|---|---|---|
 |
Samsung Semiconductor |
DDR3 RDIMM 8 GB 2R x 8 1866 Mbps 1.5 V / 1.35 V 240 (512M x 8) x 18 Mass Production. |
19938vnt. sandėlyje |
|
Samsung Semiconductor |
DDR3 RDIMM 16 GB 2R x 4 1600 Mbps 1.5 V / 1.35 V 240 (1G x 4) x 36 Mass Production. |
22394vnt. sandėlyje |
|
Samsung Semiconductor |
DDR3 RDIMM 16 GB 2R x 4 1866 Mbps 1.5 V / 1.35 V 240 (1G x 4) x 36 Mass Production. |
24981vnt. sandėlyje |
|
Samsung Semiconductor |
DDR3 RDIMM 16 GB 2R x 4 1600 Mbps 1.5 V / 1.35 V 240 (1G x 4) x 36 Mass Production. |
17417vnt. sandėlyje |
|
Samsung Semiconductor |
DDR3 RDIMM 16 GB 2R x 4 1866 Mbps 1.5 V / 1.35 V 240 (1G x 4) x 36 Mass Production. |
24334vnt. sandėlyje |
 |
Samsung Semiconductor |
DDR4 SODIMM 8 GB 1R x 8 2133 Mbps 1.2 V 260 (1G x 8) x 8 Mass Production. |
16007vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 8 GB 1R x 8 2133 Mbps 1.2 V 260 (1G x 8) x 8 EOL announced. |
19212vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 8 GB 1R x 8 2400 Mbps 1.2 V 260 (1G x 8) x 8 EOL announced. |
20871vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 8 GB 1R x 8 2666 Mbps 1.2 V 260 (1G x 8) x 8 EOL announced. |
19540vnt. sandėlyje |
 |
Samsung Semiconductor |
DDR4 SODIMM 8 GB 1R x 8 2133 Mbps 1.2 V 260 (1G x 8) x 8 Mass Production. |
21026vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 8 GB 1R x 8 2400 Mbps 1.2 V 260 (1G x 8) x 8 Mass Production. |
19334vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 8 GB 1R x 8 2666 Mbps 1.2 V 260 (1G x 8) x 8 Mass Production. |
19549vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 8 GB 1R x 8 2666 Mbps 1.2 V 260 (1G x 8) x 8 Mass Production. |
25679vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 8 GB 1R x 8 3200 Mbps 1.2 V 260 (1G x 8) x 8 Sample. |
16330vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 8 GB 1R x 8 2666 Mbps 1.2 V 260 (1G x 8) x 8 Sample. |
16794vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 16 GB 2R x 8 2133 Mbps 1.2 V 260 (1G x 8) x 16 EOL announced. |
20937vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 16 GB 2R x 8 2400 Mbps 1.2 V 260 (1G x 8) x 16 EOL announced. |
27127vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 16 GB 2R x 8 2666 Mbps 1.2 V 260 (1G x 8) x 16 EOL announced. |
19400vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 16 GB 2R x 8 2133 Mbps 1.2 V 260 (1G x 8) x 16 Mass Production. |
14685vnt. sandėlyje |
|
Samsung Semiconductor |
DDR4 SODIMM 16 GB 2R x 8 2400 Mbps 1.2 V 260 (1G x 8) x 16 Mass Production. |
14292vnt. sandėlyje |
success