| Vaizdas | PAGRINDINĖ dalis # Gamintojas | Aprašymas / PDF | Kiekis / RFQ |
|---|---|---|---|
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TFBGA. |
9433vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TFBGA. |
9416vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TFBGA. |
9400vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TFBGA. |
9383vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TFBGA. |
9367vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TFBGA. |
9350vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TSOP. |
9335vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TSOP. |
2351vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TFBGA. |
2350vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA. |
9286vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA. |
9269vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA. |
9254vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 84TWBGA. DRAM Automotive,1G,1.8V DDR2 64Mx16,400Mhz |
12664vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 400MHZ. DRAM LPDDR2 2Gb 400MHz 64Mx32 |
12684vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 667MHZ. DRAM Automotive (Tc: -40 to +105C), 1G, 1.5V, DDR3, 64Mx16, 1333MT/s @ 8-8-8, 96 ball BGA (9mm x13mm) RoHS |
12709vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA. DRAM Automotive 2G 1.5V DDR3 128Mx16 1600MTs |
12731vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA. DRAM 512M, 1.8V, 166Mhz 32Mx16 DDR Mobile |
12737vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA. |
12748vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 86TSOP II. DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 8Mx32, 166MHz, 86 pin, TSOP II (400 mil) RoHS |
12755vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 86TSOP II. DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS, IT |
12757vnt. sandėlyje |
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