| Vaizdas | PAGRINDINĖ dalis # Gamintojas | Aprašymas / PDF | Kiekis / RFQ |
|---|---|---|---|
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 44TSOP II. |
11916vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 42SOJ. |
5550vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 42SOJ. |
5533vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 42SOJ. |
5518vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 42SOJ. |
5501vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC EEPROM 4K SPI 3MHZ 8SOIC. |
5485vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TSOP. |
5468vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90LFBGA. |
5452vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TSOP. |
5437vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 86TSOP II. |
5420vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TSOP. |
5404vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 86TSOP II. |
5387vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TSOP. |
5371vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54LFBGA. |
5356vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 50TSOP II. |
5339vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA. DRAM 2G 128Mx16 1333MT/s DDR3L 1.35V |
13962vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA. DRAM 256M, 3.3V 143Mhz 32Mx8 SDR SDRAM |
13967vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA. DRAM 2G 256Mx8 1333MT/s DDR3 1.5V |
14008vnt. sandėlyje |
 |
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA. DRAM 512M, 1.8V, 400Mhz 32M x 16 DDR2 |
14009vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA. DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 8Mx32, 143MHz, 90 ball BGA (8mmx13mm) RoHS, T&R |
14009vnt. sandėlyje |
success