Vaizdas | PAGRINDINĖ dalis # Gamintojas | Aprašymas / PDF | Kiekis / RFQ |
---|---|---|---|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA. DRAM 512M 32Mx16 400MHz DDR2 1.8V |
16070vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 78TWBGA. DRAM 1G, 1.5V, DDR3, 128Mx8, 1333MT/s @ 8-8-8, 78 ball BGA (8mm x10.5mm) RoHS |
16078vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA. DRAM 2G 256Mx8 1333MT/s DDR3 1.5V |
16111vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 144LFBGA. DRAM 256M (16Mx16) 200MHz 2.5v DDR SDRAM |
16118vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TWBGA. DRAM 512M, 1.8V, 400Mhz 64Mx8 DDR2 |
16145vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ. |
16158vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 400MHZ. DRAM Automotive 1G 1.8V DDR2 64Mx16 400MHz |
16158vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 400MHZ. DRAM Automotive 1G 1.8V DDR2 64Mx16 400MHz |
16179vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 800MHZ. DRAM Automotive (Tc: -40 to +95C), 1G, 1.5V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS, T&R |
16192vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TSOP. DRAM 256M 32Mx8 143MHz SDR SDRAM, 3.3V |
16237vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ. DRAM DDR,512M,2.5V,RoHs 166MHz,64Mx8, IT |
16249vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ. DRAM 512M, 2.5V, DDR 32Mx16, 166MHz, 60 ball BGA (8mmx13mm) RoHS, IT, T&R |
16249vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA. DRAM 512M, 1.8V, 333Mhz 32M x 16 DDR2 |
16257vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA. DRAM 4G, 1.35V, 1600Mhz DDR3L |
16300vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA. DRAM 4G, 1.35V, 1333MT/s DDR3L |
16300vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 44TSOP II. SRAM 4Mb, 2.4v-3.6v, 10ns 256Kx16 Async SRAM |
16300vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 96TWBGA. DRAM 1G, 1.5V, DDR3, 64Mx16, 1866MT/s @ 13-13-13, 96 ball BGA (9mm x13mm) RoHS, IT, T&R |
16314vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA. DRAM 256M, 1.8V, 267Mhz 16Mx16 DDR2 |
16318vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M, 3.3V, 133Mhz 8Mx32 Mobile SDR |
16320vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M, 2.5V, 133Mhz 8Mx32 Mobile SDR |
16320vnt. sandėlyje |