Vaizdas | PAGRINDINĖ dalis # Gamintojas | Aprašymas / PDF | Kiekis / RFQ |
---|---|---|---|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 96TWBGA. DRAM 1G, 1.5V, DDR3, 64Mx16, 1333MT/s @ 8-8-8, 96 ball BGA (9mm x13mm) RoHS, IT, T&R |
18031vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 96TWBGA. DRAM 1G, 1.5V, DDR3, 64Mx16, 1866MT/s @ 13-13-13, 96 ball BGA (9mm x13mm) RoHS, T&R |
18031vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 44TSOP II. SRAM 8Mb LowPwr/Pwr Saver Async 512Kx16 45ns |
18065vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 2M PARALLEL 36MBGA. SRAM 2Mb,High-Speed,Async,256K x 8, 8ns/3.3v, or 10ns/2.4v-3.6v, 36 Ball mBGA (6x8 mm), RoHS, Automotive temp, ECC |
18068vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 60TFBGA. DRAM Automotive 256M,2.5V DDR1,64Mx8,166MHz |
18153vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 60TFBGA. DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM |
18194vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA. DRAM 256M, 3.3V 143Mhz 32Mx8 SDR SDRAM |
18194vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 96TWBGA. DRAM 1G 64Mx16 1600MT/s DDR3L 1.35V |
18201vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 400MHZ. DRAM 512M 1.8V 32Mx16 Ext Temp DDR2 |
18234vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M, 1.8V, 166Mhz Mobile SDRAM |
18241vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 86TSOP II. DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS, T&R |
18272vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 78TWBGA. DRAM 1G, 1.5V, DDR3, 128Mx8, 1333MT/s @ 8-8-8, 78 ball BGA (8mm x10.5mm) RoHS, T&R |
18273vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA. DRAM 512Mb, 1.8V, 333MHz 32M x 16 DDR2 |
18285vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA. DRAM 512M, 1.8V, 400Mhz 32M x 16 DDR2 |
18285vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TSOP. |
18293vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA. DRAM 256M, 2.5V, 143Mhz 16Mx16 Mobile SDR |
18293vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA. DRAM 256M, 3.3V, 133Mhz 16Mx16 Mobile SDR |
18293vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 60TFBGA. DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz |
18337vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TFBGA. DRAM 128Mb, 3.3V, 143MHz 8Mx16 SDR SDRAM |
18343vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 44TSOP. DRAM 16Mb 1Mx16 50ns Async EDO DRAM |
18389vnt. sandėlyje |