Vaizdas | PAGRINDINĖ dalis # Gamintojas | Aprašymas / PDF | Kiekis / RFQ |
---|---|---|---|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA. DRAM Automotive 2G 1.35V DDR3 128Mx16 1600MTs |
13406vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 66TSOP II. DRAM 512M 64Mx8 200MHz DDR 2.5V |
13416vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 800MHZ. DRAM Automotive (Tc: -40 to +105C), 1G, 1.5V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS, T&R |
13430vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ. DRAM 512M, 2.5V, DDR 32Mx16, 200MHz, 60 ball BGA (8mmx13mm) RoHS, IT |
13458vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ. DRAM DDR,512M,2.5V,RoHs 200MHz,64Mx8,IT |
13458vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA. DRAM 2G 256Mx8 1333MT/s DDR3 1.5V |
13478vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA. DRAM Automotive (-40 to +85C), 256M, 3.3V, SDRAM, 8Mx32, 166MHz, 90 ball BGA (8mmx13mm) RoHS, T&R |
13485vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 78TWBGA. DRAM 2G 256Mx8 1333MT/s DDR3L 1.35V |
13487vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA. DRAM 512M, 1.8V, 400Mhz 32M x 16 DDR2 |
13498vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC FLASH 2G PARALLEL 48TSOP. NAND Flash 2G 3V x8 4-bit NAND Flash |
13521vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 86TSOP II. DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS |
13521vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 3M PARALLEL 100TQFP. SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v |
13524vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 3M PARALLEL 100TQFP. SRAM 3Mb 128Kx24 10ns Async SRAM 3.3v |
13524vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 144LFBGA. |
13647vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ. DRAM Automotive (-40 to +85C), 512M, 2.5V, DDR1, 32Mx16, 166MHz, 60 ball FBGA RoHS |
13531vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA. |
8551vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA. |
8485vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 165TFBGA. |
8470vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 800MHZ. |
8291vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 48TFBGA. |
7413vnt. sandėlyje |