Vaizdas | PAGRINDINĖ dalis # Gamintojas | Aprašymas / PDF | Kiekis / RFQ |
---|---|---|---|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 44TSOP II. |
7348vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC PSRAM 16M PARALLEL 48TFBGA. |
13460vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 18M PARALLEL 100LQFP. |
6796vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC FLASH 1M SPI 100MHZ 8TSSOP. |
6715vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 288M PARALLEL 144TWBGA. DRAM 288Mbit x18 Common I/O 300MHz RLDRAM2 |
6568vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA. |
6487vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA. DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM |
13570vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA. DRAM 512M (32Mx16) 166MHz 2.5v DDR SDRAM |
13570vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 44TSOP II. |
5367vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA. DRAM 256M, 1.8V, 333Mhz 16Mx16 DDR2 SDRAM |
13599vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA. |
3419vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TSOP. |
3369vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA. DRAM 2G 128Mx16 1600MT/s DDR3 1.5V |
13619vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 48TFBGA. SRAM 4Mb 3.6v 10ns 512Kx16LP Async SRAM |
13622vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 1M PARALLEL 32STSOP I. |
2866vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5M PARALLEL 119PBGA. |
2753vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 2M PARALLEL 44LQFP. |
2720vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TSOP. |
2705vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA. DRAM 512M, 1.8V, 166Mhz 32Mx16 DDR Mobile |
13647vnt. sandėlyje |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ. DRAM Automotive (-40 to +85C), 512M, 2.5V, DDR1, 32Mx16, 200MHz, 66 pin TSOP-II RoHS |
13656vnt. sandėlyje |