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Jei jūsų vieta nenurodyta, pasirinkite vieną iš šių variantų:

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  1. Namai
  2. Produktai
  3. DRAM
  4. LPDDR4X
  5. K4UHE3D4AA-GFCL

Samsung Semiconductor - K4UHE3D4AA-GFCL

KEY Part #: K7359753

[25712vnt. sandėlyje]

    Dalies numeris:
    K4UHE3D4AA-GFCL
    Gamintojas:
    Samsung Semiconductor
    Išsamus aprašymas:
    24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Prekyboje
    Tinkamumo laikas:
    Vieneri metai
    Čipas nuo:
    Honkongas
    RoHS:
    Mokėjimo būdas:
    Siuntos būdas:
    Šeimos kategorijos:
    PAGRINDINIAI KOMPONENTAI, LTD yra elektroninių komponentų platintojas, kuris siūlo produktų kategorijas, įskaitant: DDR3, LPDDR4, LPDDR3, GDDR5, HBM Flarebolt, SLC Nand, DDR4 and LPDDR4X ...
    Konkurencinis pranašumas:
    We specialize in Samsung Semiconductor K4UHE3D4AA-GFCL electronic components. K4UHE3D4AA-GFCL can be shipped within 24 hours after order. If you have any demands for K4UHE3D4AA-GFCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4UHE3D4AA-GFCL Produkto atributai

    Dalies numeris : K4UHE3D4AA-GFCL
    Gamintojas : Samsung Semiconductor
    apibūdinimas : 24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production
    Serija : DDR3
    tankis : 24 Gb
    Org. : x32
    greitis : 4266 Mbps
    Įtampa : 1.8 / 1.1 / 0.6 V
    Temp. : -40 ~ 95 °C
    paketas : 200FBGA
    Prekės statusas : Mass Production

    Naujausios naujienos

    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Speed for the next generation of mobile devices
    How Will 5G Impact on Memory?
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    High Bandwidth Memory is Catching on for Data-intensive Computing
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    The Ultra-Low Latency SSD, Z-SSD
    Galbūt jus taip pat domina
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    Karštos dalys