[18219vnt. sandėlyje]
- Dalies numeris:
- K4U2E3S4AA-GFCL
- Gamintojas:
- Samsung Semiconductor
- Išsamus aprašymas:
- 12 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production.
- Manufacturer's standard lead time:
- Prekyboje
- Tinkamumo laikas:
- Vieneri metai
- Čipas nuo:
- Honkongas
- RoHS:
- Mokėjimo būdas:
-
- Siuntos būdas:
- Šeimos kategorijos:
- PAGRINDINIAI KOMPONENTAI, LTD yra elektroninių komponentų platintojas, kuris siūlo produktų kategorijas, įskaitant: LPDDR4X, HBM Flarebolt, GDDR6, SLC Nand, MODULE, DDR4, GDDR5 and LPDDR5 ...
- Konkurencinis pranašumas:
- We specialize in Samsung Semiconductor K4U2E3S4AA-GFCL electronic components. K4U2E3S4AA-GFCL can be shipped within 24 hours after order. If you have any demands for K4U2E3S4AA-GFCL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
K4U2E3S4AA-GFCL Produkto atributai
Dalies numeris :
K4U2E3S4AA-GFCL
Gamintojas :
Samsung Semiconductor
apibūdinimas :
12 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production
Serija :
DDR3
tankis :
12 Gb
Org. :
x32
greitis :
4266 Mbps
Įtampa :
1.8 / 1.1 / 0.6 V
Temp. :
-40 ~ 95 °C
paketas :
200FBGA
Prekės statusas :
Mass Production
Naujausios naujienos
Galbūt jus taip pat domina
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DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
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DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
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DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
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M378A1K43CB2-CTD
Samsung Semiconductor
DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
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