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Jei jūsų vieta nenurodyta, pasirinkite vieną iš šių variantų:

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  1. Namai
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  5. M393A8K40B2B-CTC

Samsung Semiconductor - M393A8K40B2B-CTC

KEY Part #: K7359909

[26035vnt. sandėlyje]

    Dalies numeris:
    M393A8K40B2B-CTC
    Gamintojas:
    Samsung Semiconductor
    Išsamus aprašymas:
    DDR4 RDIMM 64 GB 4R x 4 2400 Mbps 1.2 V 288 (2H 3DS 8G x 4) x 36 Mass Production.
    Manufacturer's standard lead time:
    Prekyboje
    Tinkamumo laikas:
    Vieneri metai
    Čipas nuo:
    Honkongas
    RoHS:
    Mokėjimo būdas:
    Siuntos būdas:
    Šeimos kategorijos:
    PAGRINDINIAI KOMPONENTAI, LTD yra elektroninių komponentų platintojas, kuris siūlo produktų kategorijas, įskaitant: SLC Nand, GDDR5, DDR3, LPDDR4X, LPDDR5, LPDDR3, LPDDR4 and HBM Flarebolt ...
    Konkurencinis pranašumas:
    We specialize in Samsung Semiconductor M393A8K40B2B-CTC electronic components. M393A8K40B2B-CTC can be shipped within 24 hours after order. If you have any demands for M393A8K40B2B-CTC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M393A8K40B2B-CTC Produkto atributai

    Dalies numeris : M393A8K40B2B-CTC
    Gamintojas : Samsung Semiconductor
    apibūdinimas : DDR4 RDIMM 64 GB 4R x 4 2400 Mbps 1.2 V 288 (2H 3DS 8G x 4) x 36 Mass Production
    Serija : DDR3
    NDR : DDR4
    DIMM tipas : RDIMM
    tankis : 64 GB
    Reitingas x Org. : 4R x 4
    greitis : 2400 Mbps
    Įtampa : 1.2 V
    Skaičius Pin : 288
    dalies sudėtis : (2H 3DS 8G x 4) x 36
    Prekės statusas : Mass Production

    Naujausios naujienos

    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Memory Solutions for Automotive
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Inside the building blocks of the 5G future
    High Bandwidth Memory is Catching on for Data-intensive Computing
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