Samsung Semiconductor - K4A4G165WF-BCTD

KEY Part #: K7359587

[26724vnt. sandėlyje]

Dalies numeris:: K4A4G165WF-BCTD

Gamintojas:: Samsung Semiconductor

Išsamus aprašymas:: 4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

Manufacturer's standard lead time:: Prekyboje

Tinkamumo laikas:: Vieneri metai

Čipas nuo:: Honkongas

RoHS:

Mokėjimo būdas:

Siuntos būdas:

Šeimos kategorijos:: PAGRINDINIAI KOMPONENTAI, LTD yra elektroninių komponentų platintojas, kuris siūlo produktų kategorijas, įskaitant: LPDDR3, HBM Aquabolt, LPDDR4, GDDR5, DDR4, SLC Nand, DDR3 and LPDDR4X ...

Konkurencinis pranašumas:: We specialize in Samsung Semiconductor K4A4G165WF-BCTD electronic components. K4A4G165WF-BCTD can be shipped within 24 hours after order. If you have any demands for K4A4G165WF-BCTD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4A4G165WF-BCTD Produkto atributai

Dalies numeris : K4A4G165WF-BCTD

Gamintojas : Samsung Semiconductor

apibūdinimas : 4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production

Serija : DDR4

tankis : 4 Gb

Org. : 256M x 16

greitis : 2666 Mbps

Įtampa : 1.2 V

Temp. : 0 ~ 85 °C

paketas : 96FBGA

Prekės statusas : Mass Production

Naujausios naujienos

[Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions

Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards

Samsung Z-SSD SZ985

Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP

Evolving Mobile Solutions: Samsung at MWC 2018

Automotive Driven by Small Packages Under the Hood

High Bandwidth Memory is Catching on for Data-intensive Computing

Bringing Artificial Intelligence to Devices Everywhere

Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology

Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI

Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology

Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day

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4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
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4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.
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