Jei jūsų vieta nenurodyta, pasirinkite vieną iš šių variantų:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Jei jūsų vieta nenurodyta, pasirinkite vieną iš šių variantų:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Namai
  2. Produktai
  3. DRAM
  4. DDR3
  5. K4B4G0846E-BYK0

Samsung Semiconductor - K4B4G0846E-BYK0

KEY Part #: K7359681

[14296vnt. sandėlyje]

    Dalies numeris:
    K4B4G0846E-BYK0
    Gamintojas:
    Samsung Semiconductor
    Išsamus aprašymas:
    4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Prekyboje
    Tinkamumo laikas:
    Vieneri metai
    Čipas nuo:
    Honkongas
    RoHS:
    Mokėjimo būdas:
    Siuntos būdas:
    Šeimos kategorijos:
    PAGRINDINIAI KOMPONENTAI, LTD yra elektroninių komponentų platintojas, kuris siūlo produktų kategorijas, įskaitant: HBM Aquabolt, GDDR5, SLC Nand, GDDR6, DDR3, HBM Flarebolt, MODULE and LPDDR5 ...
    Konkurencinis pranašumas:
    We specialize in Samsung Semiconductor K4B4G0846E-BYK0 electronic components. K4B4G0846E-BYK0 can be shipped within 24 hours after order. If you have any demands for K4B4G0846E-BYK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846E-BYK0 Produkto atributai

    Dalies numeris : K4B4G0846E-BYK0
    Gamintojas : Samsung Semiconductor
    apibūdinimas : 4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Serija : DDR3
    tankis : 4 Gb
    Org. : 512M x 8
    greitis : 1600 Mbps
    Įtampa : 1.35 V
    Temp. : 0 ~ 85 °C
    paketas : 78FBGA
    Prekės statusas : Mass Production

    Naujausios naujienos

    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Unlocking the Power of Cloud Computing
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Mission Peak Reference Server System for NGSFF SSD
    5G and Memory - from Connected Thinking to Connected Living
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Galbūt jus taip pat domina
    • K3UH5H50AM-AGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH5H50AM-EGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

      Samsung Semiconductor

      64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    Karštos dalys