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Jei jūsų vieta nenurodyta, pasirinkite vieną iš šių variantų:

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  1. Namai
  2. Produktai
  3. DRAM
  4. DDR3
  5. K4B4G1646E-BMK0

Samsung Semiconductor - K4B4G1646E-BMK0

KEY Part #: K7359701

[19193vnt. sandėlyje]

    Dalies numeris:
    K4B4G1646E-BMK0
    Gamintojas:
    Samsung Semiconductor
    Išsamus aprašymas:
    4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Prekyboje
    Tinkamumo laikas:
    Vieneri metai
    Čipas nuo:
    Honkongas
    RoHS:
    Mokėjimo būdas:
    Siuntos būdas:
    Šeimos kategorijos:
    PAGRINDINIAI KOMPONENTAI, LTD yra elektroninių komponentų platintojas, kuris siūlo produktų kategorijas, įskaitant: LPDDR5, MODULE, HBM Flarebolt, LPDDR4, DDR3, DDR4, LPDDR4X and LPDDR3 ...
    Konkurencinis pranašumas:
    We specialize in Samsung Semiconductor K4B4G1646E-BMK0 electronic components. K4B4G1646E-BMK0 can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-BMK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-BMK0 Produkto atributai

    Dalies numeris : K4B4G1646E-BMK0
    Gamintojas : Samsung Semiconductor
    apibūdinimas : 4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production
    Serija : DDR3
    tankis : 4 Gb
    Org. : 256M x 16
    greitis : 1600 Mbps
    Įtampa : 1.35 V
    Temp. : -40 ~ 95 °C
    paketas : 96FBGA
    Prekės statusas : Mass Production

    Naujausios naujienos

    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Autonomous Driving and the Quest for Safety
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Evolving Mobile Solutions: Samsung at MWC 2018
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    Karštos dalys