Jei jūsų vieta nenurodyta, pasirinkite vieną iš šių variantų:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Jei jūsų vieta nenurodyta, pasirinkite vieną iš šių variantų:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Namai
  2. Produktai
  3. DRAM
  4. DDR3
  5. K4B4G0846R-BFMA

Samsung Semiconductor - K4B4G0846R-BFMA

KEY Part #: K7359685

[17141vnt. sandėlyje]

    Dalies numeris:
    K4B4G0846R-BFMA
    Gamintojas:
    Samsung Semiconductor
    Išsamus aprašymas:
    4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Prekyboje
    Tinkamumo laikas:
    Vieneri metai
    Čipas nuo:
    Honkongas
    RoHS:
    Mokėjimo būdas:
    Siuntos būdas:
    Šeimos kategorijos:
    PAGRINDINIAI KOMPONENTAI, LTD yra elektroninių komponentų platintojas, kuris siūlo produktų kategorijas, įskaitant: GDDR6, MODULE, DDR4, HBM Flarebolt, LPDDR4X, LPDDR5, GDDR5 and LPDDR4 ...
    Konkurencinis pranašumas:
    We specialize in Samsung Semiconductor K4B4G0846R-BFMA electronic components. K4B4G0846R-BFMA can be shipped within 24 hours after order. If you have any demands for K4B4G0846R-BFMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846R-BFMA Produkto atributai

    Dalies numeris : K4B4G0846R-BFMA
    Gamintojas : Samsung Semiconductor
    apibūdinimas : 4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production
    Serija : DDR3
    tankis : 4 Gb
    Org. : 512M x 8
    greitis : 1866 Mbps
    Įtampa : 1.35 V
    Temp. : -40 ~ 95 °C
    paketas : 78FBGA
    Prekės statusas : Mass Production

    Naujausios naujienos

    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Autonomous Driving and the Quest for Safety
    Inside the building blocks of the 5G future
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    High Bandwidth Memory is Catching on for Data-intensive Computing
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Unlocking the Power of Cloud Computing
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    The future of NAND technology
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Galbūt jus taip pat domina
    • K3UH5H50AM-AGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH5H50AM-EGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

      Samsung Semiconductor

      64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    Karštos dalys