Jei jūsų vieta nenurodyta, pasirinkite vieną iš šių variantų:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Jei jūsų vieta nenurodyta, pasirinkite vieną iš šių variantų:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Namai
  2. Produktai
  3. DRAM
  4. DDR3
  5. K4B4G0846E-BCK0

Samsung Semiconductor - K4B4G0846E-BCK0

KEY Part #: K7359677

[26869vnt. sandėlyje]

    Dalies numeris:
    K4B4G0846E-BCK0
    Gamintojas:
    Samsung Semiconductor
    Išsamus aprašymas:
    4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Prekyboje
    Tinkamumo laikas:
    Vieneri metai
    Čipas nuo:
    Honkongas
    RoHS:
    Mokėjimo būdas:
    Siuntos būdas:
    Šeimos kategorijos:
    PAGRINDINIAI KOMPONENTAI, LTD yra elektroninių komponentų platintojas, kuris siūlo produktų kategorijas, įskaitant: LPDDR4, HBM Flarebolt, GDDR6, SLC Nand, DDR3, LPDDR3, LPDDR4X and DDR4 ...
    Konkurencinis pranašumas:
    We specialize in Samsung Semiconductor K4B4G0846E-BCK0 electronic components. K4B4G0846E-BCK0 can be shipped within 24 hours after order. If you have any demands for K4B4G0846E-BCK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846E-BCK0 Produkto atributai

    Dalies numeris : K4B4G0846E-BCK0
    Gamintojas : Samsung Semiconductor
    apibūdinimas : 4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production
    Serija : DDR3
    tankis : 4 Gb
    Org. : 512M x 8
    greitis : 1600 Mbps
    Įtampa : 1.5 V
    Temp. : 0 ~ 85 °C
    paketas : 78FBGA
    Prekės statusas : Mass Production

    Naujausios naujienos

    Samsung Z-SSD SZ985
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Memory Solutions for Automotive
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Mission Peak Reference Server System for NGSFF SSD
    Inside the building blocks of the 5G future
    Galbūt jus taip pat domina
    • K3UH5H50AM-AGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH5H50AM-EGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

      Samsung Semiconductor

      64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    Karštos dalys